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| FMB200 Discrete POWER & Signal Technologies FMB200 C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .N2 PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA = 25C unless otherwise noted Parameter Value 45 60 6.0 500 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max FMB200 700 5.6 180 Units mW mW/C C/W (c) 1998 Fairchild Semiconductor Corporation FMB200 PNP Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVCBO BVCEO BVEBO ICBO ICES IEBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage* Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC = 10 A, IB = 0 IC = 1.0 mA, IE = 0 IE = 10 A, IC = 0 VCB = 50 V, IE = 0 VCE = 40 V, IE = 10 VEB = 4.0 V, IC = 0 60 45 6.0 50 50 50 V V V nA nA nA ON CHARACTERISTICS hFE DC Current Gain IC = 100 A, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 5.0 V* IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 80 100 100 450 350 0.2 0.4 0.85 1.0 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo NF Current Gain - Bandwidth Product Output Capacitance Noise Figure VCE = 20 V, IC = 20 mA VCB = 10 V, f = 1.0 MHz IC = 100 A, VCE = 5.0 V, RG = 2.0 k, f = 1.0 kHz 300 4.5 2.5 MHz pF dB *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V VCESAT- COLLECTOR EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 0.2 0.15 25 C 400 300 125 C = 10 25 C 200 100 0 0.01 - 40 C 0.1 0.05 0 0.1 125 C - 40 C 0.1 1 10 100 IC - COLLECTOR CURRENT (mA) 1 10 100 I C - COLLECTOR CURRENT (mA) P 68 300 FMB200 PNP Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) 1.2 1 0.8 0.6 0.4 0.2 0 0.1 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current = 10 Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 0.1 V CE = 5V - 40 C 25 C 125 C - 40 C 25 C 125 C 1 10 100 I C - COLLECTOR CURRENT (mA) 300 1 10 I C - COLLECTOR CURRENT (mA) 100 200 Collector-Cutoff Current vs. Ambient Temperature ICBO- COLLECTOR CURRENT (nA) V CB = 50V 10 BV CER - BREAKDOWN VOLTAGE (V) 100 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 95 90 1 85 80 0.1 75 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( C) 125 70 0.1 1 10 100 1000 RESISTANCE (k ) VCE - COLLECTOR-EMITTER VOLTAGE (V) Collector Saturation Region 4 Input and Output Capacitance vs Reverse Voltage 100 Ta = 25C 3 f = 1.0 MHz 2 Ic = 100 uA CAPACITANCE (pF) 50 mA 300 mA 10 Cib Cob 1 0 100 300 700 2000 4000 0.1 1 10 100 I B - BASE CURRENT (uA) Vce - COLLECTOR VOLTAGE(V) FMB200 PNP Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) f T - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current 40 Switching Times vs Collector Current 300 270 240 210 TIME (nS) 180 150 120 90 60 30 0 10 td tf tr IB1 = IB2 = Ic / 10 V cc = 10 V Vce = 5V 30 ts 20 10 0 1 10 P 68 20 50 100 150 I C- COLLECTOR CURRENT (mA) 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) 300 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 SOT-6 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 |
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